- 专利标题: THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
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申请号: US15107094申请日: 2015-09-15
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公开(公告)号: US20170263734A1公开(公告)日: 2017-09-14
- 发明人: Dini XIE , Meili WANG , Xianbin XU , Liangchen YAN , Xiaojin ZHANG
- 申请人: BOE TECHNOLOGY GROUP CO., LTD
- 国际申请: PCT/CN2015/089658 WO 20150915
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L27/12 ; H01L21/473 ; H01L29/24 ; H01L29/786 ; H01L21/02
摘要:
The present disclosure provides a thin film transistor array substrate and a fabrication method thereof, and a display device. The thin film transistor array substrate includes an active layer. The active layer is formed using a zinc target under an environment of oxygen and nitrogen in a sputtering chamber. A source/drain buffer layer is formed on the active layer using the zinc target by a sputtering process in the sputtering chamber under an environment containing one of oxygen and nitrogen.
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