- 专利标题: SUB-THRESHOLD ENABLED FLASH MEMORY SYSTEM
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申请号: US15245016申请日: 2016-08-23
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公开(公告)号: US20170287534A1公开(公告)日: 2017-10-05
- 发明人: Christophe J. Chevallier , Daniel M. Cermak , Scott Hanson
- 申请人: Ambiq Micro, Inc
- 申请人地址: US TX Austin
- 专利权人: Ambiq Micro, Inc
- 当前专利权人: Ambiq Micro, Inc
- 当前专利权人地址: US TX Austin
- 主分类号: G11C7/14
- IPC分类号: G11C7/14
摘要:
A flash memory system for use in an electronic system comprising an integrated circuit such as a microcontroller. The flash memory system embodies one or more circuits adapted to operate at sub- or near-threshold voltage levels. These low-power circuits are selectively activated or de-activated to balance power dissipation with the response time of the memory system required in particular applications.
公开/授权文献
- US09779788B1 Sub-threshold enabled flash memory system 公开/授权日:2017-10-03
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