Invention Application
- Patent Title: Method and Apparatus for Forming Boron-Doped Silicon Germanium Film, and Storage Medium
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Application No.: US15472486Application Date: 2017-03-29
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Publication No.: US20170287914A1Publication Date: 2017-10-05
- Inventor: Mitsuhiro OKADA
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2016-069597 20160330
- Main IPC: H01L27/108
- IPC: H01L27/108 ; C23C16/22 ; H01L21/265 ; C23C16/458 ; C23C16/455 ; H01L21/02 ; C23C16/02 ; C23C16/52
Abstract:
A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.
Public/Granted literature
- US10529721B2 Method and apparatus for forming boron-doped silicon germanium film, and storage medium Public/Granted day:2020-01-07
Information query
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