- 专利标题: METHOD OF BONDING SEMICONDUCTOR SUBSTRATES
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申请号: US15604454申请日: 2017-05-24
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公开(公告)号: US20170301646A1公开(公告)日: 2017-10-19
- 发明人: Soon-Wook Kim , Lan Peng , Patrick Verdonck , Robert Miller , Gerald Peter Beyer , Eric Beyne
- 申请人: IMEC VZW
- 优先权: EP14194506.3 20141124
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometer. Then the substrates are subjected to a pre-bond annealing step and then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250° C. It has been found that the bond strength is excellent, even at the above named annealing temperatures, which are lower than presently known in the art.
公开/授权文献
- US10141284B2 Method of bonding semiconductor substrates 公开/授权日:2018-11-27