- 专利标题: METHOD FOR FABRICATING METALLIC OXIDE THIN FILM TRANSISTOR
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申请号: US15521246申请日: 2014-10-31
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公开(公告)号: US20170316953A1公开(公告)日: 2017-11-02
- 发明人: Shengdong ZHANG , Yang SHAO , Xiang XIAO , Xin HE
- 申请人: SHENZHEN GRADUATE SCHOOL, PEKING UNIVERSITY
- 优先权: CN201410562680.6 20141021
- 国际申请: PCT/CN2014/000963 WO 20141031
- 主分类号: H01L21/473
- IPC分类号: H01L21/473 ; H01L29/786 ; H01L29/66 ; H01L21/475 ; H01L21/02 ; H01L21/443
摘要:
A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.
公开/授权文献
- US09991135B2 Method for fabricating a metal oxide thin film transistor 公开/授权日:2018-06-05