- 专利标题: METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP
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申请号: US15594482申请日: 2017-05-12
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公开(公告)号: US20170330757A1公开(公告)日: 2017-11-16
- 发明人: Christoph EICHLER , Andre SOMERS , Harald KOENIG , Bernhard STOJETZ , Andreas LOEFFLER , Alfred LELL
- 申请人: OSRAM Opto Semiconductors GmbH
- 优先权: DE102016108893.5 20160513
- 主分类号: H01L21/268
- IPC分类号: H01L21/268 ; H01L21/324 ; H01L21/3105
摘要:
A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.