- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US15402272申请日： 2017-01-10
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公开(公告)号： US20170330893A1公开(公告)日： 2017-11-16
- 发明人: HAUK HAN , JI WOON IM , DO HYUNG KIM , HYUN SEOK LIM
- 申请人： HAUK HAN , JI WOON IM , DO HYUNG KIM , HYUN SEOK LIM
- 优先权： KR10-2016-0058243 20160512
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L23/528 ; H01L21/306 ; H01L23/522 ; H01L29/36 ; H01L29/06
摘要：
A semiconductor device includes a first interlayer insulating layer and a second interlayer insulating layer, and a horizontal conductive pattern interposed between the first interlayer insulating layer and the second interlayer insulating layer. Vertical structures extend through the first interlayer insulating layer, the second interlayer insulating layer, and the horizontal conductive pattern. Each of the first interlayer insulating layer and the second interlayer insulating layer has regions of different impurity concentrations.
公开/授权文献
- US09865617B2 Semiconductor device 公开/授权日：2018-01-09
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