Invention Application
- Patent Title: Semiconductor Device and Power Conversion Device Using Same
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Application No.: US15538907Application Date: 2014-12-24
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Publication No.: US20170352604A1Publication Date: 2017-12-07
- Inventor: Takashi HIRAO , Kan YASUI , Kazuhiro SUZUKI
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Chiyoda-ku,Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Chiyoda-ku,Tokyo
- International Application: PCT/JP2014/084020 WO 20141224
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/29 ; H01L23/373 ; H01L23/00 ; H02M7/00 ; H01L29/872 ; H01L29/16 ; H01L29/06 ; H01L25/18 ; H02M7/537 ; H01L23/053 ; H02P27/06

Abstract:
In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.
Public/Granted literature
- US10109549B2 Semiconductor device and power conversion device using same Public/Granted day:2018-10-23
Information query
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