- 专利标题: CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD
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申请号: US15622427申请日: 2017-06-14
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公开(公告)号: US20170362735A1公开(公告)日: 2017-12-21
- 发明人: Yusuke MORI , Mamoru IMADE , Shinsuke KOMATSU , Michirou YOSHINO
- 申请人: OSAKA UNIVERSITY , Panasonic Corporation
- 优先权: JP2016-119959 20160616
- 主分类号: C30B9/12
- IPC分类号: C30B9/12 ; C30B29/40
摘要:
A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.
公开/授权文献
- US10145022B2 Crystal growth apparatus and crystal production method 公开/授权日:2018-12-04
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