发明申请
- 专利标题： SUBTRACTIVE VFET PROCESS FLOW WITH REPLACEMENT METAL GATE AND METALLIC SOURCE/DRAIN
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申请号： US15199550申请日： 2016-06-30
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公开(公告)号： US20180006118A1公开(公告)日： 2018-01-04
- 发明人: Hari V. Mallela , Robert Russell Robison , Reinaldo Ariel Vega , Rajasekhar Venigalla
- 申请人： International Business Machines Corporation
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/8234 ; H01L27/088 ; H01L29/78
摘要：
A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.
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