Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US15697627Application Date: 2017-09-07
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Publication No.: US20180012912A1Publication Date: 2018-01-11
- Inventor: Shunpei YAMAZAKI , Junichi KOEZUKA , Yukinori SHIMA , Masami JINTYOU , Takashi HAMOCHI , Satoshi HIGANO , Yasuharu HOSAKA , Toshimitsu OBONAI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2013-248284 20131129; JP2014-038615 20140208
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L49/02 ; H01L29/45 ; H01L29/786
Abstract:
A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
Public/Granted literature
- US11430817B2 Semiconductor device Public/Granted day:2022-08-30
Information query
IPC分类:
