Invention Application
- Patent Title: METAL CHALCOGENIDE DEVICE AND PRODUCTION METHOD THEREFOR
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Application No.: US15544170Application Date: 2015-09-30
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Publication No.: US20180013020A1Publication Date: 2018-01-11
- Inventor: Minseok CHOI , Changgu LEE , Hunyoung BARK , Jinhwan LEE
- Applicant: LG ELECTRONICS INC. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Seoul KR Suwon-si, Gyeonggi-do
- Assignee: LG ELECTRONICS INC.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee: LG ELECTRONICS INC.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee Address: KR Seoul KR Suwon-si, Gyeonggi-do
- Priority: KR10-2015-0014291 20150129
- International Application: PCT/KR2015/010293 WO 20150930
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/0392 ; H01L31/0236 ; C01B17/42 ; C01G33/00 ; C01G39/06
Abstract:
The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.
Information query
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