A semiconductor device includes a driver circuit having a plurality of FinFETs, a memory cell having a plurality of FinFETs and supplied with a first output signal from the driver circuit through each of word lines, a first power supply wiring supplied with a first power supply potential, a second power supply wiring supplied with a second power supply potential, and a ground potential setting circuit which is coupled to the first power supply wiring, the second power supply wiring, and the driver circuit and which selects the first power supply potential or the second power supply potential and supplies the same to the driver circuit as an operating potential. An N-type FinFET of the FinFETs included in the driver circuit is supplied with the first power supply potential or the second power supply potential selected by the ground potential setting circuit.