Examples described in this disclosure relate to a memory cell having a magnetic Josephson junction device with a doped magnetic layer. In one example, a memory cell including a magnetic Josephson junction (MJJ) device is provided. The MJJ device may include at least a first layer formed above a second layer and a third layer formed below the second layer, where the first layer is a free magnetic layer, the second layer is a non-magnetic layer, where the third layer is a fixed magnetic layer. The free magnetic layer may comprise a magnetic alloy doped with at least one of Vanadium, Zirconium, Molybdenum, or Hafnium, and the fixed magnetic layer may comprise an un-doped second magnetic alloy.