- 专利标题: SUBSTRATE PLACEMENT IN IMMERSION LITHOGRAPHY
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申请号: US15682135申请日: 2017-08-21
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公开(公告)号: US20180067401A1公开(公告)日: 2018-03-08
- 发明人: Christiaan Alexander HOOGENDAM , Gerrit Johannes Nijmeijer , Minne Cuperus , Petrus Anton Willem Cornelia Maria Van Eijck
- 申请人: ASML NETHERLANDS B.V.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F9/00 ; G01B11/14 ; G01B11/27 ; G01B11/26
摘要:
A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.
公开/授权文献
- US10345711B2 Substrate placement in immersion lithography 公开/授权日:2019-07-09
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