Invention Application
- Patent Title: SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
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Application No.: US15497283Application Date: 2017-04-26
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Publication No.: US20180096935A1Publication Date: 2018-04-05
- Inventor: Hyo-Jin KIM , Chang-Hwa KIM , Hwi-Chan JUN , Chul-Hong PARK , Jae-Seok YANG , Kwan-Young CHUN
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2016-0128085 20161005
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L29/06 ; H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L27/088 ; H01L21/8234

Abstract:
A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
Public/Granted literature
- US10177093B2 Semiconductor devices and methods of manufacturing the same Public/Granted day:2019-01-08
Information query
IPC分类: