Invention Application
- Patent Title: FDSOI-TYPE FIELD-EFFECT TRANSISTORS
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Application No.: US15722340Application Date: 2017-10-02
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Publication No.: US20180097014A1Publication Date: 2018-04-05
- Inventor: Vincent Barral , Nicolas Planes , Antoine Cros , Sebastien Haendler , Thierry Poiroux , Olivier Weber , Patrick Scheer
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA , Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Crolles FR Montrouge FR Paris
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Crolles FR Montrouge FR Paris
- Priority: FR1659574 20161004
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
An electronic chip includes FDSOI-type field-effect transistors. The transistor each have a channel region that is doped at an average level in a range from 1016 to 5*1017 atoms/cm3 with a conductivity type opposite to that of a conductivity type for the dopant in the drain and source regions.
Information query
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