The invention disclosed a method for manufacturing an electrode of a semiconductor device, comprising: forming a first interlayer dielectric layer having a first opening on a first surface of a semiconductor substrate; forming a first resist mask having a second opening on a surface of the first interlayer dielectric layer, wherein the first opening and the second opening are connected to form a first stacked opening; forming a first conductive layer on the first resist mask, wherein the first conductive layer comprises a first portion being located on a surface of the first resist mask and a second portion being located inside the first stacked opening; and removing the first resist mask, wherein the first portion of the first conductive layer is removed together with the first resist mask, and the second portion of the first conductive layer is retained as a first surface electrode.