发明申请
- 专利标题： SENSOR DEVICE
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申请号： US15843896申请日： 2017-12-15
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公开(公告)号： US20180108609A1公开(公告)日： 2018-04-19
- 发明人: Takatsugu NEMOTO , Yasutaka NAKASHIBA , Takasuke HASHIMOTO , Shinichi UCHIDA , Kazunori GO , Hiroshi OE , Noriko YOSHIKAWA
- 申请人： Renesas Electronics Corporation
- 优先权： JP2013-184208 20130905
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; G01R33/06 ; G01R31/26 ; H01L49/02 ; H01F27/28 ; H01L23/528
摘要：
A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. The inductor is formed using an interconnect layer (to be described later using FIG. 3). The power line and the semiconductor device overlap each other when viewed from a direction perpendicular to the semiconductor device. The semiconductor device includes two inductors. The power line extends between the two inductors when viewed from a direction perpendicular to the semiconductor device.