发明申请
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US15735858申请日： 2016-03-02
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公开(公告)号： US20180138132A1公开(公告)日： 2018-05-17
- 发明人: Koichiro NISHIZAWA , Takayuki HISAKA
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2015-161093 20150818
- 国际申请： PCT/JP2016/056394 WO 20160302
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/04 ; H01L23/48 ; H01L23/10 ; H01L21/48 ; H01L21/768
摘要：
Airtightness of a hollow portion is maintained, and yield and durability are improved. A semiconductor device 1 includes a device substrate 2, a semiconductor circuit 3, a sealing frame 7, a cap substrate 8, via portions 10, electrodes 11, 12 and 13, and a bump portion 14 or the like. A hollow portion 9 in which the semiconductor circuit 3 is housed in an airtight state is provided between the device substrate 2 and the cap substrate 8. The bump portion 14 connects all the via portions 10 and the cap substrate 8. Thus, the via portions 10 can be reinforced using the bump portion 14A.
公开/授权文献
- US10224294B2 Semiconductor device 公开/授权日：2019-03-05
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