- 专利标题： METHOD TO FORM OHMIC CONTACTS TO SEMICONDUCTORS USING QUANTIZED METALS
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申请号： US15576253申请日： 2015-06-27
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公开(公告)号： US20180151684A1公开(公告)日： 2018-05-31
- 发明人: Benjamin CHU-KUNG , Van H. LE , Rafael RIOS , Gilbert DEWEY , Scott B. CLENDENNING , Jack T. KAVALIEROS
- 申请人： Intel Corporation
- 国际申请： PCT/US2015/038191 WO 20150627
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L21/768 ; H01L21/285 ; H01L29/417 ; H01L29/66 ; H01L29/78
摘要：
An apparatus including an integrated circuit device including at least one low density of state metal/semiconductor material interface, wherein the at least one low density of state metal is quantized. An apparatus including an integrated circuit device including at least one interface of a low density of state metal and a semiconductor material, wherein a contact area of the metal at the interface is graded. A method including confining a contact area of a semiconductor material; and forming a metal contact in the contact area.
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