Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US15379362Application Date: 2016-12-14
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Publication No.: US20180166370A1Publication Date: 2018-06-14
- Inventor: Chai-Chi LIN , Chih-Cheng LEE , Hsing Kuo TIEN , Chih-Yung YANG
- Applicant: Advanced Semiconductor Engineering, Inc.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/538 ; H01L25/18 ; H01L25/16 ; H01L25/065 ; H01L21/48
Abstract:
A semiconductor substrate includes an interconnection structure and a dielectric layer. The dielectric layer surrounds the interconnection structure and defines a first cavity. The first cavity is defined by a first sidewall, a second sidewall, and a first surface of the dielectric layer. The first sidewall is laterally displaced from the second sidewall.
Public/Granted literature
- US09997442B1 Semiconductor device and method of manufacturing the same Public/Granted day:2018-06-12
Information query
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