In an embodiment, a photoelectric conversion element includes an electrode 1, a counter-electrode 2, and an electrolyte layer 3 interposed between the electrode 1 and the counter electrode 2, wherein: a semiconductor oxide layer 10, as well as semiconductor oxide grains 21 and sensitizing dye 22 fixed via the semiconductor oxide layer 10, are provided on at least a part of a face of the electrode 1 facing the counter-electrode 2; the semiconductor oxide layer 10 has a film structure constituted by grains which are more densely packed than are the fixed semiconductor oxide grains 21; the electrolyte layer 3 contains I3− and I−; and the concentration of I− in the electrolyte layer 3 is 1 to 10 mol/L and is 2 million to 200 million times that of I3−. The photoelectric conversion element is capable of generating a large amount of electricity and high electrical current.