Invention Application
- Patent Title: Fet-Type Gas Sensor and Method of Controlling Gas
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Application No.: US15869943Application Date: 2018-01-12
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Publication No.: US20180202960A1Publication Date: 2018-07-19
- Inventor: Kazuo ONO , Yoshitaka SASAGO
- Applicant: Hitachi, Ltd.
- Priority: JP2017-005526 20170117
- Main IPC: G01N27/28
- IPC: G01N27/28 ; H03F3/45 ; H01L29/788 ; G01N27/414 ; H01L29/06 ; H01L29/78

Abstract:
There is provided a field effect transistor type gas sensor, the gas sensor including a substrate, an oxide film on the substrate, a gate electrode on the oxide film, a body electrode which is disposed on the substrate, a first switch that changes a voltage which is applied to the gate electrode, and a second switch that changes a voltage which is applied to the body electrode. The gate electrode and the first switch are connected with each other through an electrical wire.
Information query