Invention Application
- Patent Title: SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, SILICON CARBIDE SINGLE CRYSTAL EPITAXIAL WAFER, AND ELECTRONIC DEVICE
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Application No.: US15748274Application Date: 2016-08-25
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Publication No.: US20180219069A1Publication Date: 2018-08-02
- Inventor: Takeshi OKAMOTO , Hiroyuki KONDO , Takashi KANEMURA , Shinichiro MIYAHARA , Yasuhiro EBIHARA , Shoichi ONDA , Hidekazu TSUCHIDA , Isaho KAMATA , Ryohei TANUMA
- Applicant: DENSO CORPORATION , CENTRAL RESEARCH INSTITUTE OF ELECTRONIC POWER INDUSTRY.
- Priority: JP2015-170814 20150831
- International Application: PCT/JP2016/074724 WO 20160825
- Main IPC: H01L29/16
- IPC: H01L29/16 ; C30B29/36 ; H01L29/32 ; H01L29/04 ; H01L21/02 ; H01L29/94 ; H01L29/66
Abstract:
A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cm2 or less.
Public/Granted literature
Information query
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