- 专利标题: MEMRISTOR AND METHOD OF PRODUCTION THEREOF
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申请号: US15962546申请日: 2018-04-25
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公开(公告)号: US20180248117A1公开(公告)日: 2018-08-30
- 发明人: Alexander Alexandrovich Bessonov , Dmitrii Igorevich Petukhov , Marina Nikolaevna Kirikova , Mark Bailey , Tapani Ryhanen
- 申请人: Provenance Asset Group LLC
- 优先权: RUPCT/RU2014/000316 20140430
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01G7/06
摘要:
A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).