An assembly and a device for vapor deposition are provided in this disclosure, an assembly includes a cell and a housing, the cell is accommodated in the housing, the gaseous materials to be vapor deposited eject from the housing and are vapor deposited onto the substrate. The housing is capable of rotating relative to the cell. The film layer structure can be obtained by controlling the angles of rotation of the housing. Single film layer as well as the composite film layer with various changes of doping ratio can be formed on the substrate of the assembly and the device for vapor deposition in this disclosure.