- 专利标题： MANUFACTURING METHOD OF QUANTUM DOT
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申请号： US15860902申请日： 2018-01-03
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公开(公告)号： US20180291268A1公开(公告)日： 2018-10-11
- 发明人: Min Ki NAM , Kyoung Won PARK , Keun Chan OH , Jae Jin LYU , Baek Hee LEE , Hyeok Jin LEE , Jaikyeong KIM , Heesuk KIM , Wan Ki BAE , Doh Chang LEE
- 申请人： SAMSUNG DISPLAY CO., LTD. , KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- 优先权： KR10-2017-0044795 20170406
- 主分类号： C09K11/88
- IPC分类号： C09K11/88
摘要：
A method of manufacturing a quantum dot, the method including preparing a CdS/CdSe/CdS quantum dot that includes a CdS-containing first core, a CdSe-containing second core, and a CdS-containing shell; forming a Cu2S/Cu2Se/Cu2S quantum dot by injecting the CdS/CdSe/CdS quantum dot into a solution containing a Cu precursor; and forming a ZnS/ZnSe/ZnS quantum dot by injecting the Cu2S/Cu2Se/Cu2S quantum dot into a solution containing a Zn precursor.
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