- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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申请号: US15927115申请日: 2018-03-21
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公开(公告)号: US20180294215A1公开(公告)日: 2018-10-11
- 发明人: Hironori KAWAMINAMI
- 申请人: FUJITSU LIMITED
- 申请人地址: JP Kawasaki-shi
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki-shi
- 优先权: JP2017-078338 20170411
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L23/48
摘要:
A semiconductor device includes: a first semiconductor chip that includes through electrodes; a second semiconductor chip; and an interposer that has a recessed portion formed in a front surface thereof and includes a first wiring provided under a bottom surface of the recessed portion, in which the first semiconductor chip is fitted in the recessed portion with a chip top surface thereof flipped down to be electrically connected to the first wiring, the second semiconductor chip is connected on the front surface, of the interposer, around the recessed portion, and at the same time, is stacked on the first semiconductor chip in a manner to partially overlap the first semiconductor chip, and is electrically connected to the first semiconductor chip via the through electrodes.
公开/授权文献
- US10418315B2 Semiconductor device and manufacturing method thereof 公开/授权日:2019-09-17