- 专利标题： GALLIUM NITRIDE DEVICE FOR HIGH FREQUENCY AND HIGH POWER APPLICATIONS
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申请号： US15975917申请日： 2018-05-10
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公开(公告)号： US20180331186A1公开(公告)日： 2018-11-15
- 发明人: Puneet Srivastava , James G. Fiorenza
- 申请人： Puneet Srivastava , James G. Fiorenza
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L29/20 ; H01L29/778 ; H01L21/02 ; H01L29/66
摘要：
A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.
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