The present disclosure is directed to a plurality of waffle gate parallel transistors having a shared gate on a surface of a semiconductor substrate. The shared gate has connected lines that form a plurality of frames, lines of each of the frames being over the perimeter of a respective source or drain region. The shared gate includes frames of a first size and shape and frames of a second size and shape, such as squares, rectangles and octagons. The frames having the first size and shape are each over a respective source region and the frames having the second size and shape are each over a respective drain region. Each of the frames having a first size and shape share at least one side with one of the frames having the second size and shape.