Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US16104372Application Date: 2018-08-17
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Publication No.: US20190013396A1Publication Date: 2019-01-10
- Inventor: Chih-Hao WANG , Wai-Yi LIEN , Gwan-Sin CHANG , Yu-Ming LIN , Ching HSUEH , Jia-Chuan YOU , Chia-Hao CHANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/84 ; H01L21/8234 ; H01L29/417 ; H01L21/8238
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor fin, a first gate stack, and a first metal element-containing dielectric mask. The semiconductor fin protrudes from the substrate. The first gate stack is over the semiconductor fin. The first metal element-containing dielectric mask is over the first gate stack.
Public/Granted literature
- US10720514B2 Semiconductor device and manufacturing method thereof Public/Granted day:2020-07-21
Information query
IPC分类:
