发明申请
- 专利标题： THIN FILM TRANSISTOR
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申请号： US16090996申请日： 2017-04-03
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公开(公告)号： US20190067489A1公开(公告)日： 2019-02-28
- 发明人: Hiroshi GOTO , Mototaka OCHI , Takumi KITAYAMA , Toshihiro KUGIMIYA
- 申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 申请人地址： JP Kobe-shi
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人地址： JP Kobe-shi
- 优先权： JP2016-075375 20160404
- 国际申请： PCT/JP2017/013984 WO 20170403
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/24 ; H01L29/49 ; H01L21/02 ; H01L21/443 ; H01L21/477 ; H01L29/66
摘要：
Disclosed herein is a thin film transistor including at least an oxide semiconductor layer, a gate insulting film, a gate electrode, a source-drain electrode and a protective film in this order on a substrate and further including a protective layer. The oxide semiconductor layer includes an oxide constituted of In, Ga, Sn and O and an atomic ratio of each metal element satisfies the following relationships: 0.30≤In/(In+Ga+Sn)≤0.50, 0.19≤Ga/(In+Ga+Sn)≤0.30 and 0.24≤Sn/(In+Ga+Sn)≤0.45. The protective layer contains SiNx, and mobility is 35 cm2/Vs or more.
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