Invention Application
- Patent Title: NON-VOLATILE MEMORY INCLUDING SELECTIVE ERROR CORRECTION
-
Application No.: US16196304Application Date: 2018-11-20
-
Publication No.: US20190087267A1Publication Date: 2019-03-21
- Inventor: Carla L. Christensen
- Applicant: Micron Technology, Inc.
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F3/06 ; G11C29/04

Abstract:
Some embodiments include apparatuses and methods using a first memory area and a second memory area included a memory device, and using control circuitry included in the memory device to communicate with a memory controller. The memory controller includes an error correction engine. The control circuitry of the memory device is configured to retrieve the first information from the first memory area and store in the first information after the error correction engine performs an error detection operation on the first information. The control circuitry is configured to retrieve second information from the first memory area and store the second information in the second memory area without an additional error detection operation performed on the second information if a result from the error detection operation performed by the error correction engine on the first information meets a threshold condition.
Public/Granted literature
- US10942661B2 Non-volatile memory including selective error correction Public/Granted day:2021-03-09
Information query