Invention Application
- Patent Title: NATIVE OR UNCONTROLLED OXIDE REDUCTION BY HWCVD H* USING SPECIFIC METAL CHAMBER LINER
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Application No.: US16043998Application Date: 2018-07-24
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Publication No.: US20190093232A1Publication Date: 2019-03-28
- Inventor: Sukti CHATTERJEE
- Applicant: Applied Materials, Inc.
- Main IPC: C23C16/56
- IPC: C23C16/56 ; C23C16/22 ; C23C16/455

Abstract:
Apparatus and methods are disclosed to provide arrays of substantially oxide-free structures, such as titanium nanotubes or microwells. In one aspect, a hot wire chemical vapor deposition (HWCVD) chamber includes a metal chamber liner manufactured from one or more of aluminum (Al), lithium (Li), magnesium (Mg), calcium (Ca), zirconium (Zr), strontium (Sr), cerium (Ce), barium (Ba), beryllium (Be), lanthanum (La), thorium (Th), and alloys thereof. In one aspect, a method includes positioning a substrate having an array of titanium oxide structures with an oxide layer on surfaces thereof in the HWCVD chamber having the metal chamber liner, exposing the titanium oxide structures with the oxide layer on surfaces thereof to hydrogen (H) radicals, and removing the oxide layer to form well-ordered titanium structures.
Public/Granted literature
- US10513778B2 Native or uncontrolled oxide reduction by HWCVD H* using specific metal chamber liner Public/Granted day:2019-12-24
Information query
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