- 专利标题: Immersion Lithography System Using a Sealed Wafer Bath
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申请号: US16217095申请日: 2018-12-12
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公开(公告)号: US20190113855A1公开(公告)日: 2019-04-18
- 发明人: Burn Jeng Lin , Ching-Yu Chang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.
公开/授权文献
- US10520836B2 Immersion lithography system using a sealed wafer bath 公开/授权日:2019-12-31