- 专利标题： DRAIN CURRENT SENSING AND FAULT PROTECTION CIRCUIT BASED ON GATE VOLTAGE FOR GATE CURRENT DRIVEN FIELD EFFECT TRANSISTORS
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申请号： US16016166申请日： 2018-06-22
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公开(公告)号： US20190123546A1公开(公告)日： 2019-04-25
- 发明人: Fei Wang , Edward A. Jones
- 申请人： University of Tennessee Research Foundation
- 主分类号： H02H7/12
- IPC分类号： H02H7/12 ; H02M1/08 ; H02H7/122 ; H02H7/125 ; H02H1/00
摘要：
A power converter circuit includes a switch including a field effect transistor, the field effect transistor being a wide bandgap field effect transistor and being configured to maintain an on operational state responsive to a maintenance signal received through a gate terminal, a current sensing circuit that is configured to estimate a drain terminal current of the field effect transistor responsive to a voltage between the gate terminal of the field effect transistor and a source terminal of the field effect transistor, and a gate driving circuit that is configured to generate the maintenance signal responsive to the estimate of the drain terminal current.