A semiconductor device includes a first circuit and a second circuit. The first circuit includes a first gate, a first drain, and a first source. The second circuit includes a second gate, a second drain, and a second source. The first drain and the first source of the first circuit include a first doping material with a first concentration. A gate pitch and a gate critical dimension of the first gate of the first circuit are the same as a gate pitch and a gate critical dimension of the second gate of the second circuit. The second drain and the second source of the second circuit include a second doping material with a second concentration, wherein the first concentration is different from the second concentration.