Invention Application
- Patent Title: FINFET TRANSISTOR WITH CHANNEL STRESS INDUCED VIA STRESSOR MATERIAL INSERTED INTO FIN PLUG REGION ENABLED BY BACKSIDE REVEAL
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Application No.: US16323661Application Date: 2016-09-30
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Publication No.: US20190172950A1Publication Date: 2019-06-06
- Inventor: Aaron D. LILAK , Sean T. MA , Rishabh MEHANDRU , Patrick MORROW , Stephen M. CEA
- Applicant: Intel Corporation
- International Application: PCT/US2016/055029 WO 20160930
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/06 ; H01L21/8238 ; H01L21/762 ; H01L29/66
Abstract:
An integrated circuit apparatus including a body; a transistor formed on a first portion of the body, the transistor including a gate stack and a channel defined in the body between a source and a drain; and a plug formed in a second portion of the body, the plug including a material operable to impart a stress on the first portion of the body. A method of forming an integrated circuit device including forming a transistor body on a substrate; forming a transistor device in a first portion of the transistor body on a first side of the substrate; and dividing the transistor body into at least the first portion and a second portion with a plug in the transistor body, the plug including a material operable to impart a stress on the first portion of the body, wherein the material is introduced through a second side of the substrate.
Information query
IPC分类:
