A P-type thin-film transistor and manufacturing method are provided. The method includes: forming an active layer having a P-type material on a buffering layer; forming a gate insulation layer on the active layer; depositing a gate metal layer on the gate insulation layer; forming a photoresist layer on the gate metal layer, and patterning the photoresist layer; etching the gate metal layer to form a gate electrode such that a projection of the gate electrode is within the patterned photoresist layer; using the patterned photoresist layer as a barrier layer to etch the gate insulation layer such that a projection of the gate electrode is within the gate insulation layer, and a projection of the gate insulation layer is within the active layer; doping two side regions of the active layer located below the gate insulation layer; and forming a source electrode and drain electrode on the doped regions.