A light emitting diode (LED) panel is provided. The LED panel includes a thin-film transistor (TFT) backplane which includes a plurality of LED bonding areas, and a plurality of LEDs which are respectively bonded to the plurality of LED bonding areas, wherein the plurality of LED bonding areas are formed to have different heights on the TFT backplane according to an LED type bonded thereto, and wherein a relatively thin LED from among the plurality of LEDs is bonded to an LED bonding area of a relatively low height from among the plurality of LED bonding areas.