- 专利标题： METHOD FOR FABRICATING THIN FILM TRANSISTOR SUBSTRATE
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申请号： US16273374申请日： 2019-02-12
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公开(公告)号： US20190252420A1公开(公告)日： 2019-08-15
- 发明人: Jun Hee LEE , Sung Hoon MOON , Dong Hyun SON , Pil Soo AHN , Kohei EBISUNO , Sang Hoon OH
- 申请人： SAMSUNG DISPLAY CO., LTD.
- 优先权： KR10-2018-0017763 20180213
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/32 ; H01L29/786 ; H01L51/00
摘要：
A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.
公开/授权文献
- US10854645B2 Method for fabricating thin film transistor substrate 公开/授权日：2020-12-01
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