- 专利标题: PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES
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申请号: US16298801申请日: 2019-03-11
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公开(公告)号: US20190273467A1公开(公告)日: 2019-09-05
- 发明人: Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
- 申请人: SunPower Corporation
- 主分类号: H02S50/15
- IPC分类号: H02S50/15 ; G01N21/64
摘要:
Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
公开/授权文献
- US10804843B2 Photonic degradation monitoring for semiconductor devices 公开/授权日:2020-10-13
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