Invention Application
- Patent Title: DISPLAY DEVICE INCLUDING A CMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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Application No.: US16437857Application Date: 2019-06-11
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Publication No.: US20190296095A1Publication Date: 2019-09-26
- Inventor: Jongchan Lee , Taehoon Yang , Woonghee Jeong , Kyoungwon Lee , Yongsu Lee
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Priority: KR10-2017-0076861 20170616
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12

Abstract:
A display device includes at least one transistor. The transistor has an active pattern including a first active area and a second active area. The first active area includes a first channel area and an n-doped area contacting the first channel area. The second active area includes a second channel area and a p-doped area contacting the second channel area. A first insulation layer covers at least a portion of the active pattern. A first gate electrode is disposed on the first insulation layer and at least partially overlaps the first channel area. A second gate electrode is disposed on the first insulation layer and at least partially overlaps the second channel area. A taper angle of the second gate electrode is larger than a taper angle of the first gate electrode.
Information query
IPC分类: