- 专利标题: TUNGSTEN PENTACHLORIDE CONDITIONING AND CRYSTALLINE PHASE MANIPULATION
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申请号: US15966924申请日: 2018-04-30
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公开(公告)号: US20190330077A1公开(公告)日: 2019-10-31
- 发明人: Feng LI , Sonia PLAZA , Jean-Marc GIRARD , Nicolas BLASCO , Yumin LIU
- 申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- 主分类号: C01G41/04
- IPC分类号: C01G41/04 ; C30B33/02 ; C30B35/00
摘要:
Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.
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