发明申请
- 专利标题: PHOTODIODE DEVICE, PHOTODIODE DETECTOR AND METHODS OF FABRICATING THE SAME
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申请号: US16343983申请日: 2017-09-12
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公开(公告)号: US20190334045A1公开(公告)日: 2019-10-31
- 发明人: Lan ZHANG , Haifan HU , Xuepeng CAO , Jun LI
- 申请人: NUCTECH COMPANY LIMITED
- 优先权: CN201611121395.6 20161207
- 国际申请: PCT/CN2017/101365 WO 20170912
- 主分类号: H01L31/0352
- IPC分类号: H01L31/0352 ; H01L31/02 ; H01L31/18 ; H01L27/146
摘要:
According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.