Invention Application
- Patent Title: METHODS OF CALIBRATING SEMICONDUCTOR RADIATION DETECTORS USING K-EDGE FILTERS
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Application No.: US16155786Application Date: 2018-10-09
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Publication No.: US20190383956A1Publication Date: 2019-12-19
- Inventor: Elmaddin GULIYEV , Georgios PREKAS , Michael ROZLER , Krzysztof INIEWSKI , Jean MARCOUX , Conny HANNSON
- Applicant: REDLEN TECHNOLOGIES, INC.
- Main IPC: G01T7/00
- IPC: G01T7/00 ; G01T1/24

Abstract:
A set of N standard bin count distributions may be generated by irradiating a test radiation detector system with an X-ray beam attenuated by a respective one of N different K-edge filters for each of the at least one X-ray source energy setting. Energy bins of detectors of a target radiation detector system may be calibrated by generating measured bin count distributions for each calibration setting in which a respective one of the N different K-edge filters attenuates a source X-ray beam. Calibration parameters of the detectors of the target radiation detector system may be adjusted to match each of the measured bin count distributions to a corresponding standard bin count distribution. In addition, energy resolution of the radiation detectors can be measured and calibrated by fitting a portion of the measured X-ray spectrum near a K-edge to a fitting function.
Public/Granted literature
- US11169286B2 Methods of calibrating semiconductor radiation detectors using K-edge filters Public/Granted day:2021-11-09
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