- 专利标题： THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
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申请号： US16429528申请日： 2019-06-03
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公开(公告)号： US20200035841A1公开(公告)日： 2020-01-30
- 发明人: Tongshang SU , Dongfang WANG , Qinghe WANG , Liangchen YAN
- 申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Hefei CN Beijing
- 专利权人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Hefei CN Beijing
- 优先权： CN201810840346.0 20180727
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/12 ; H01L29/66
摘要：
A TFT and a method for manufacturing the TFT, an array substrate, and a display device are provided. An active layer of the TFT includes a channel region, a first conductive region and a second conductive region, and the channel region is arranged between the first conductive region and the second conductive region. The channel region includes a first side and a second side, the first side is opposite to the second side, the first side is in contact with a third side of the first conductive region, the second side is in contact with a fourth side of the second conductive region, and a length of the first side is greater than a length of the third side.
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