- 专利标题： FinFET Device Including a Stem Region of a Fin Element
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申请号： US16665289申请日： 2019-10-28
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公开(公告)号： US20200058770A1公开(公告)日： 2020-02-20
- 发明人: Jean-Pierre Colinge , Kuo-Cheng Ching , Zhiqiang Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L21/8234
摘要：
A finFET device having a substrate and a fin disposed on the substrate. The fin includes a passive region, a stem region overlying the passive region, and an active region overlying the stem region. The stem region has a first width and the active region has a second width. The first width is less than the second width. The stem region and the active region also have different compositions. A gate structure is disposed on the active region.
公开/授权文献
- US11133404B2 FinFET device including a stem region of a fin element 公开/授权日：2021-09-28
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