Invention Application
- Patent Title: CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
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Application No.: US16702233Application Date: 2019-12-03
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Publication No.: US20200105588A1Publication Date: 2020-04-02
- Inventor: Sean KING , Hui Jae YOO , Sreenivas KOSARAJU , Timothy GLASSMAN
- Applicant: Intel Corporation
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/02 ; H01L23/00

Abstract:
Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.
Public/Granted literature
- US10763161B2 Conformal low temperature hermetic dielectric diffusion barriers Public/Granted day:2020-09-01
Information query
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